The Full Form of MEE is Migration Enhanced Epitaxy.

Variants of MBE can be characterised not only by the chemical nature of beam species or by the way the beams are produced but also by the way the beams are supplied to growing surfaces. While in other MBE approaches the molecular beams are simultaneously supplied to the surface, in migration enhanced epitaxy (MEE) the beams of constituent species alternately feed the surface , In the archetypal example of GaAs, Ga and As species impinge on the surface in ML or sub-ML amounts during separated cation and anion subcycles. To emphasise its MBE derivation, MEE is termed also as atomic layer MBE (ALMBE) . A thorough review of the features of MEE is given in a chapter of the present book